Грубо говоря, транзистор в таком режиме будет греться. Т.е. выделка овчины смысла не имеет...During normal operation, GATE is enhanced 10V above OUTFB. The external MOSFET source voltage is monitored through a resistive divider between OUTFB and OVSET. When OUTFB rises above the adjusted overvoltage threshold, an internal comparator sinks the charge-pump current, discharging the external GATE, regulating OUTFB at the OVSET overvoltage threshold. OUTFB remains active during the overvoltage transients and the MOSFET continues to conduct during the overvoltage event, operating in switched-linear mode.
As the transient begins decreasing, OUTFB fall time will depend on the MOSFET’s GATE charge, the internal charge-pump current, the output load, and the tank capacitor at OUTFB.
